On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition

The photoluminescence emission of multilayer structures composed of layers of silicon rich oxide with high silicon content and layers of silicon rich oxide with low silicon content obtained by low pressure chemical vapor deposition is here presented. Different parameters for the preparation of the multilayers have been varied such as the Si concentration and the thicknesses of the layers. Additionally, the samples were oxidized at different temperatures. For all samples the photoluminescence seems to have the same origin: defects in the oxide matrix and defects at the interfaces between the Si nanocrystals. The structural and compositional properties of the multilayer structures are discussed. © 2011 Elsevier B.V. All rights reseved.

Low-pressure chemical vapor deposition; Multilayers; Nanoparticles; Photoluminescence; Silicon rich oxide; Transmission electron microscopy Compositional properties; High silicon content; Multilayer arrays; Multilayer structures; Oxide matrix; Photoluminescence emission; Si concentration; Si nanocrystal; Silicon contents; Silicon rich oxide; Silicon rich oxides; Transmission electron; Defects; Low pressure chemical vapor deposition; Nanocrystals; Photoluminescence; Transmission electron microscopy; Vapor deposition; Multilayers

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