abstract

• Room temperature cathodoluminescence and photoluminescence were used to study silicon rich oxide (SRO) films with 5.5%25 silicon excess. Intense blue and red luminescence emissions were found. A SRO film was deposited by low-pressure chemical vapor deposition and was annealed at 1100 °C by 3 h in a nitrogen ambient. The emission from the SRO films was modeled as being due to donor-acceptor-pair decay. Calculations have been made to obtain the first estimates of the donor and acceptor energy distributions in SRO films. © 2011 American Vacuum Society.

authors

• Aceves-Mijares M.
• Falcony C.
• López Estopier Rosa Elvia
• Yu Z.

publication date

• 2011-01-01

funding provided via

• Consejo Nacional de Ciencia y Tecnología, CONACYT  Grant

published in

• Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics  Journal

keywords

• Chemical vapor deposition; Donor and acceptor; Donor-acceptors; Energy state; Intense blue; Nitrogen ambient; Red luminescence; Room temperature; Silicon rich oxides; Oxide films

Digital Object Identifier (DOI)

• 10.1116/1.3554735

start page

end page

volume

• 29

issue

• 2