Measurements of above-bandgap optical anisotropies in the (0 0 1) surface of GaAs Article uri icon

abstract

  • We report on a detailed experimental study of above-bandgap optical anisotropies of the (0 0 1) surface of GaAs as a function of doping concentration and conductivity type. We conclude that the measured spectra have two components, a first one which depends on these two parameters and a second one which is independent on them. The first component is actually dependent on the surface electric field due to the pinning of the Fermi level at the sample surface states. © 1987.

publication date

  • 1987-01-01