abstract

• Si/SiO 2 superlattices (SLs) structures were prepared using a low-pressure chemical vapor deposition (LPCVD) method. The structural and optical properties of the SLs materials were characterized using atomic force microscopy (AFM), Fourier transformed infrared (FTIR) absorption, x-ray diffraction, and room-temperature photoluminescence (PL) measurements. The AFM results show that a periodically layered Si/SiO 2 structure was successfully deposited with nanometer-sized Si dots embedded in the Si layers. The FTIR spectra show that the SiO 2 near the Si/SiO 2 interface is more ordered than the amorphous SiO 2 in the center of the SiO 2 layers. The Si/SiO 2 SLs films show a room-temperature PL in the visible-near infrared wavelength region. The PL intensity is significantly enhanced by a high-temperature annealing at 1100°C. The peak position and intensity of the main emission band in the PL spectra strongly depend on the Si layer thickness. A pronounced redshift with increasing Si layer thickness is observed. This emission peak position can be fitted by the theory of quantum confinement effect in Si dots. The emission from recombination through defect and interface states was also observed in the SLs films. © 2006 American Institute of Physics.

authors

• Aceves-Mijares M.
• Carrillo J.
• Falcony C.
• López Estopier Rosa Elvia
• Quiroga E.
• Yu Z.

publication date

• 2006-01-01

funding provided via

• National Natural Science Foundation of China, NSFC: 50172061  Grant

published in

• Journal of Applied Physics  Journal

keywords

• High temperature annealing; Low pressure chemical vapor deposition (LPCVD); Redshift; Spectra; Annealing; Atomic force microscopy; Chemical vapor deposition; Fourier transform infrared spectroscopy; Optical properties; Photoluminescence; Superlattices; Temperature distribution; Thickness control; X ray diffraction analysis; Silica

Digital Object Identifier (DOI)

• 10.1063/1.2210667

start page

end page

volume

• 100

issue

• 1