The far-infrared absorption spectrum of electron-hole drops in silicon Article uri icon

abstract

  • We report on the first observation of the absorption spectrum of electron-hole drops in silicon. The absorption at 14°K consists of a broad peak at 34.2 ± 0.2 meV in the far-infrared spectral range. The lineshape can be well fit with a model that uses Mie theory of light absorption by small particles. The model includes both intra and interband terms. We find a plasma frequency of 51.9 ± 0.4 meV and from this we calculate a electron-hole density in the drops of (3.37 ± 0.06) × 1018 cm-3. © 1978.

publication date

  • 1978-01-01