Far-infrared absorption by excitons in silicon Article

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Overview

abstract

• We report on the first observation of 1s to 2p absorption by excitons in pure silicon. A group of strong lines at 10.2, 11.4 and 12.0 meV is observed along with a continuum extending to higher frequency. A theoretical model for the excitonic absorption accounts well for the observed structure. © 1978.

authors

• Altarelli M.
• Lipari N.O.
• Navarro Contreras Hugo Ricardo
• Timusk T.

publication date

• 1978-01-01

published in

• Solid State Communications  Journal

Research

keywords

• SILICON AND ALLOYS - Optical Properties; SEMICONDUCTING SILICON

Identity

Digital Object Identifier (DOI)

• 10.1016/0038-1098(78)90216-8

Additional Document Info

start page

• 217

end page

• 219

volume

• 25

issue

• 4