selected publications

• article

  • Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  26:1093-1096. 2008-01-01
  • Temperature dependence of photoluminescence oxygen-related deep levels in Al0.2Ga0.3In0.5P:Be grown by solid source molecular beam epitaxy.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  26:1089-1092. 2008-01-01
  • Study of the homoepitaxial growth of GaAs on (631) oriented substrates.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  24:1568-1571. 2006-01-01

• conference paper

  • Optical characterization of Alx Ga1-x As/GaAs modulation-doped heterostructures grown under As2 and As4 fluxes.  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. C3I13-C3I16. 2010-01-01
  • Photoluminescence and photoreflectance studies of InAs self-assembled nanostructures on GaAs(631) substrates.  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. C3C14-C3C18. 2010-01-01