abstract

• In this work, we report the procedure for the synthesis by chemical bath deposition of Heyrovskyite - Pb6Bi2S9 (H- LBS) thin films as a new emerging material. Homogeneous thin films are obtained, with a thickness from 95 to 130 nm. X-ray diffraction shows that deposited films are amorphous, and crystallize to the orthorhombic Pb6Bi2S9 phase when annealed in air at 150 °C. The deposited material has direct optical energy gap (��)from 1.31 to 1.62 eV. A heterojunction formed by H- LBS/PbS shows diode behavior with the generation of open circuit voltage (VOC) of 285 mV, short circuit current density (JSC) of 13.3 mA/cm2 and power conversion efficiency (PCE) of 0.98%25, evidencing the feasible application of H- LBS thin films as absorbers in solar cells.

authors

• Moreno García Harumi
• Rodríguez A.

publication date

• 2023-01-01

published in

• Thin Solid Films  Journal

keywords

• Thin film, Lead bismuth sulfide (H-LBS), Chemical bath deposition, Emerging material, Solar Cell HETEROJUNCTIONS

Digital Object Identifier (DOI)

• 10.1016/j.tsf.2023.139866

PubMed ID

start page

end page

volume

• 775

issue