abstract

• Vertically stacked 2D materials have emerged as new tunable platforms to design and develop devices with unprecedented functionalities. Understanding the band alignment and interlayer charge transfer processes taking place in these heterostructures is key to designing and developing future optoelectronic devices. In this letter, we report on the optical and structural properties of supported and suspended MoS2/Graphene/MoS2 vertical heterostructures using Raman and photoluminescence (PL) spectroscopies. The formation of vertical heterostructures (VH) is achieved by multiple wet transfers on micro-sized holes in SiO2/Si substrates, resulting in different 2D stacking systems for comparison. The strong interlayer coupling is confirmed by Raman spectroscopy. The enhancement of the PL emission observed on the trilayer heterostructure (either support or suspended) compared with bare MoS2 or MoS2/Graphene, suggests the formation of a spatial type-II band alignment assisted by the graphene layer, operating as an n /metal/n junction.

authors

• Cerda Méndez Edgar Armando
• Del Pozo Zamudio Osvaldo

publication date

• 2023-01-01

funding provided via

• Consejo Nacional de Ciencia y Tecnología (CONACyT) IA101822,319273, Universidad Nacional Autónoma de México  Grant

published in

• PLoS ONE  Journal

keywords

• vertical heterostructures, photoluminescence, charge transfer

Digital Object Identifier (DOI)

• 10.1371/journal.pone.0283834

PubMed ID

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